Product Summary
The SPA20N60C3 is designed as one kind of cool MOS power transistor device.
Parametrics
Absolute maximum ratings: (1)Continuous drain current Tc = 25℃: 20.7 A;(2)Continuous drain current Tc = 100℃: 20.7A;(3)Pulsed drain current, tp limited by Tjmax: 62.1 A;(4)Avalanche energy, single pulse: 690 mJ;(5)Avalanche energy, repetitive tAR limited by Tjmax: 1 mJ;(6)Avalanche current, repetitive tAR limited by Tjmax: 20 A;(7)Gate source voltage static: ±20 V;(8)Gate source voltage AC (f >1Hz): ±30 V;(9)Power dissipation, TC = 25℃: 208 or 34.5W;(10)Operating and storage temperature: -55 to +150℃.
Features
Features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance; (8)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).
Diagrams
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![]() SPA20N60C3 |
![]() Infineon Technologies |
![]() MOSFET COOL MOS N-CH 600V 20.7A |
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![]() SPA2000-0.015-00-1012 |
![]() Bergquist Company |
![]() Thermal Interface Products SIL-PAD A2000 .015" 10X12" |
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![]() SPA2000-0.015-00-1012-NA |
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![]() SILPAD A2000 0.015" 10"X12" |
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![]() SPA2000-0.015-00-104 |
![]() Bergquist Company |
![]() Thermal Interface Products SIL PAD A2000 .015" 1.00x.75x.30x.14 |
![]() Data Sheet |
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![]() SPA2000-0.015-00-54 |
![]() Bergquist Company |
![]() Thermal Interface Products SIL PAD A2000 .015" .750x.500x.187x.147 |
![]() Data Sheet |
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![]() SPA2000-0.015-00-58 |
![]() Bergquist Company |
![]() Thermal Interface Products SIL PAD A2000 .015" .750x.500x.187x.125 |
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![]() SPA2000-0.015-00-94 |
![]() Bergquist Company |
![]() Thermal Interface Products RH-25 .015" No ADH 30.15X30.61X5.94 |
![]() Data Sheet |
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