Product Summary

The TLP759 is a TOSHIBA Photocoupler. It consists of a GaAlAs high-output light emitting diode and a high speed detector of one chip photo diode transistor. This unit is 8-lead DIP. The TLP759 has no internal base connection, and a faraday shield integrated on the photodetector chip provides an effective common mode noise transient immunity. The TLP759 guarantees minimum and maximum of propagation delay time, switching time dispersion, and high common mode transient immunity.

Parametrics

TLP759 absolute maximum ratings: (1)Forward current IF: 25 mA; (2)Pulse forward current IFP: 50 mA; (3)Peak transient forward current IFPT: 1 A; (4)Reverse voltage VR: 5 V; (5)Diode power dissipation PD: 45 mW; (6)Output current IO: 8 mA; (7)Peak output current IOP 16 mA; (8)Output voltage VO: -0.5 to 20 V; (9)supply voltage VCC: -0.5 to 30 V; (10)Output power dissipation PO: 100 mW; (11)Operating temperature range Topr: -55 to 100 ℃; (12)Storage temperature range Tstg: -55 to 125 ℃; (13)Lead solder temperature(10s) Tsol: 260 ℃; (14)Isolation voltage(AC,1min.,R.H.≤60%,Ta=25℃) BVS: 5000 Vrms.

Features

TLP759 features: (1)Isolation voltage: 5000Vrms (min.); (2)Common mode transient immunity: ±10kV / μs (min.) @VCM = 1500 V; (3)Switching Time: tpHL,tpLH = 0.1μs (min.) = 0.8μs (max.) @IF = 10mA,VCC = 15V,RL = 20kΩ,Ta = 25℃; (4)Switching time dispersion: 0.7μs (max.)(|tpLH-tpHL|); (5)TTL compatible; (6)UL recognized: UL1577, file no.E67349.

Diagrams

TLP759 diagram

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TLP759
TLP759

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TLP759(IGM)
TLP759(IGM)

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TLP759F
TLP759F

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TLP759IGM
TLP759IGM

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