(China (Mainland))
Product Summary
The MJE15032G is a Complementary Silicon Plastic Power Transistor designed for use as high frequency drivers in audio amplifiers.
Parametrics
MJE15032G absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 250 Vdc; (2)Collector-Base Voltage, VCB: 250 Vdc; (3)Emitter-Base Voltage, VEB: 5.0 Vdc; (4)Collector Current - Continuous, IC: 8.0Adc; Peak: 16Adc; (5)Base Current, IB: 2.0 Adc; (6)Total Power Dissipation, PD: 50W at Tc=25℃; 0.40W/℃; (7)Total Power Dissipation, PD: 2.0W at TA = 25℃; 0.016W/℃ at Derate above 25℃; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: –65 to +150℃.
Features
MJE15032G features: (1)DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc= 10 (Min) @ IC = 2.0 Adc; (2)Collector-Emitter Sustaining Voltage -VCEO(sus) = 250 Vdc (Min); (3)High Current Gain-Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; (4)TO-220AB Compact Package; (5)Epoxy Meets UL 94 V-0 @ 0.125 in; (6)ESD Ratings: Machine Model C Human Body Model 3B; (7)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MJE15032G |
ON Semiconductor |
Transistors Bipolar (BJT) 8A 250V 50W NPN |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MJE13003 |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 2A 400V |
Data Sheet |
Negotiable |
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MJE13004 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Fast SW |
Data Sheet |
Negotiable |
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MJE13004 LEDFREE |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Fast SW |
Data Sheet |
Negotiable |
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MJE13005 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Fast SW |
Data Sheet |
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MJE13005 LEADFREE |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Fast SW |
Data Sheet |
Negotiable |
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MJE15029G |
ON Semiconductor |
Transistors Bipolar (BJT) 8A 120V 50W PNP |
Data Sheet |
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